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NTLJD4116N
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
I D = 250 m A, Ref to 25 ° C
30
18.1
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V DS = 24 V, V GS = 0 V
T J = 25 ° C
T J = 85 ° C
1.0
10
m A
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
0.4
0.7
1.0
V
Negative Gate Threshold
V GS(TH) /T J
2.8
mV/ ° C
Temperature Coefficient
Drain?to?Source On?Resistance
R DS(on)
V GS = 4.5, I D = 2.0 A
47
70
m W
V GS = 2.5, I D = 2.0 A
V GS = 1.8, I D = 1.8 A
V GS = 1.5, I D = 1.5 A
56
88
133
90
125
250
Forward Transconductance
g FS
V DS = 5.0 V, I D = 2.0 A
4.5
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C ISS
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 15 V
427
51
32
pF
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Gate Resistance
Q G(TOT)
Q G(TH)
Q GS
Q GD
R G
V GS = 4.5 V, V DS = 15 V,
I D = 2.0 A
5.4
0.5
0.8
1.24
0.37
6.5
nC
W
SWITCHING CHARACTERISTICS (Note 6)
Turn?On Delay Time
t d(ON)
4.8
ns
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DD = 15 V,
I D = 2.0 A, R G = 2.0 W
11.8
14.2
1.7
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V SD
V GS = 0 V, IS = 2.0 A
T J = 25 ° C
T J = 125 ° C
0.78
0.62
1.2
V
Reverse Recovery Time
t RR
10.5
Charge Time
Discharge Time
Reverse Recovery Time
t a
t b
Q RR
V GS = 0 V, d ISD /d t = 100 A/ m s,
I S = 2.0 A
7.6
2.9
5.0
ns
nC
5. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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